Rosemary Ainslie Quantum Magazine Circuit COP > 17 Claims

[Pirate88179]

I don't know how you guys are missing this.  As you can see in this scope shot, overunity is clearly shown.  As a matter of fact, ANY circuit using a MOSFET is overunity.  Of course, it depends heavily upon the location where the tests are performed, and who is doing the testing, and, most important, highly technical test equipment as is shown here.

Bill

[TinselKoala]

Poor Ainslie must be in real pain. You guys have first ANALYSED her and now ANALISING her.  Have some mercy. 

She keeps crying out for "MOAR", though. When she remembers the Safety Word, maybe I'll stop.

[TinselKoala]

I don't know how you guys are missing this.  As you can see in this scope shot, overunity is clearly shown.  As a matter of fact, ANY circuit using a MOSFET is overunity.  Of course, it depends heavily upon the location where the tests are performed, and who is doing the testing, and, most important, highly technical test equipment as is shown here.

Bill

Thanks.... Added to the SCRN image database!

[MarkE]

The Gate boost circuit is interesting. Ainslie, however, is using a considerable negative offset in her FG settings, even though the Q1 is only turned on by the positive portion of the signal.
What is really "anemic" is the turn-on time of the mosfet itself in response to the gate signal. It's not completely obvious from the traces shown above, but looking at the Drain trace makes it clear that the mosfet isn't really turning fully ON until the very end of the gate pulse.

The amplitude of the ringing is sensitive to the negative offset value, so I'm not sure what effect the Gate Boost circuit will have. But I'll be finding out before too much longer.... since I have 2n2222a and 2n3907 transistors in stock.

Meanwhile here's another screenshot, showing a bit more amplitude on the ringing. This is just regulated by the negative FG offset and the amplitude setting. I'm using about 20 v p-p with -15 to around +5 V amplitude. Again, the frequency and duty cycle measurements are thrown off by the ringing, but I've positioned the cursors so that the period of one cycle can be read.

What you are seeing is the effects of discharging the gate capacitance faster.  The function generator has 50 Ohms in series with its output stage.  More negative drive increases the discharge current.  BTW you can string those two transistors across +18V and -18V and get nice fast turn on and turn off using the FG.  Or use them with +15V / 0V with a 555.

[MarkE]

I think you may be missing a flyback diode across the load? You'll notice that the ringing doesn't go below zero.

Attached is one schematic of a sim I did long ago. I also attached a sim scope shot showing the ringing with the truncated bottom.

A 1N4007 is a really poor choice.  An ultrafast diode or Schottky is far preferred.