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Overunity Machines Forum



Reliable and Flexible Switching System

Started by EMJunkie, April 25, 2014, 02:28:38 AM

Previous topic - Next topic

0 Members and 1 Guest are viewing this topic.

Are you interested in purchasing the IPC-quandra V6?

Yes
4 (80%)
No
1 (20%)

Total Members Voted: 5

lost_bro

Quote from: MarkE on April 27, 2014, 07:00:16 AM
An IGBT with a 1us turn off time isn't going to do very well hard switching at 7MHz.

Hello All:

Personally, for what it is worth, If I was designing something new I would try to use the cutting edge technology.

I would design the MOSFET driver stage to handle the higher required gate voltage of the NEW SiC MOSFETs.

Specifically I would incorporate the  C2M0080120D Silicon Carbide Power  Z-FET (N-Channel Enhancement Mode)  MOSFET.

PLease see attachment:

Td(on)=12ns
Td(off)=23.2ns
Trise   =13.6ns
Tfall    =18.4ns
Ciss   =950pf 

So the total Input capacitance is 5150pf/950pf= 5.421 x LESS than the H5N3003P MOSFET mentioned earlier.

This equates to less time spent in the Miller plateau when charging the discharging the gate so less heat generated and a faster overall pulse cycle is possible, not to mention the superior thermal characteristics. 

Forgot to mention that the Trr (body diode) = 40ns, pretty damn fast for an integral body diode......

And the D-S breakdown voltage is 1.2KV........


take care, peace
lost_bro



MarkE

Quote from: lost_bro on April 28, 2014, 08:17:08 PM
Hello All:

Personally, for what it is worth, If I was designing something new I would try to use the cutting edge technology.

I would design the MOSFET driver stage to handle the higher required gate voltage of the NEW SiC MOSFETs.

Specifically I would incorporate the  C2M0080120D Silicon Carbide Power  Z-FET (N-Channel Enhancement Mode)  MOSFET.

PLease see attachment:

Td(on)=12ns
Td(off)=23.2ns
Trise   =13.6ns
Tfall    =18.4ns
Ciss   =950pf 

So the total Input capacitance is 5150pf/950pf= 5.421 x LESS than the H5N3003P MOSFET mentioned earlier.

This equates to less time spent in the Miller plateau when charging the discharging the gate so less heat generated and a faster overall pulse cycle is possible, not to mention the superior thermal characteristics. 

Forgot to mention that the Trr (body diode) = 40ns, pretty damn fast for an integral body diode......

And the D-S breakdown voltage is 1.2KV........


take care, peace
lost_bro
Those are very nice FETs if you are building something like a DC - AC inverter.  If the task is higher current at lower voltage, then they would not be the best choice.

EMJunkie

Hi All,

Ok The First Poll Results:

Quote
Do you think a Reliable and Flexible Switching System is a good idea for all to have access to?
Yes                                                <-- Clear Winner 10/10 said yes.
No
Maybe
Too Dangerous for some

Everyone to date agrees this is an important issue and needs a solution.

Please vote for the Microcontroller of your choice. If you have another suggestion please let me know. Remember we are looking the best features for the best price!

All the Best

  Chris

lost_bro

Quote from: MarkE on April 28, 2014, 08:52:31 PM
Those are very nice FETs if you are building something like a DC - AC inverter.  If the task is higher current at lower voltage, then they would not be the best choice.

Hello MarkE

Well then I believe we have to agree on the task......
How LOW of a voltage and how HIGH of a current?

How much current *should* an O.U. device have to switch?

Usually when dealing with D.S. or S.M. devices, my biggest problem has been to switch *High* voltage , not current.

ie: EMF generated from inductor switching can give very *high* voltage spikes.......

These SiC can be paralleled very easily for higher current if need be, and have *almost*  unmatched switching speeds and one of the fastest body diodes available.... and better thermal characteristics then most lower voltage mosfets and Avalanche rated.

....they cost more and driver design is more involved than required for the garden variety MOSFET .

Maybe designing different *Driver Modules* that can be interchanged easily would be the solution.  I for one would want to continue using my SiC MOSFETs!

take care, peace
lost_bro

Dog-One

I may be a tad bit getting ahead of myself, but suppose we added the capability of an oscilloscope/spectrum analyzer here...

Then we would open the door to a fully self optimizing control system.  Imagine connecting this thing to whatever kind of Akula0083 inductor you have available and the system self-tunes.  All we would need are the libraries and the tuning process, code it up and let'r run.


M@