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Overunity Machines Forum



ENERGY AMPLIFICATION

Started by Tito L. Oracion, February 06, 2009, 01:45:08 AM

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0 Members and 13 Guests are viewing this topic.

lancaIV

I can not tell you anything about the Kapanadze invention cause I did not follow his development !

But what I think is that this kind of converter will be the common energy capture process

http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=19941018&CC=US&NR=5356484A&KC=A

but then as printable Nano-dot ink. Nano-transistors -array

40 years before:
http://worldwide.espacenet.com/publicationDetails/description?CC=US&NR=4004210A&KC=A&FT=D&ND=3&date=19770118&DB=EPODOC&locale=en_EP

The linewidth of the conductors for the module circuits using electron beam microfabrication may typically be of the order of 10@-@4 to 10@-@6 cm. Micro circuit manufacturing techniques may be used in the fabrication of the modules which can range in size according to the power output requirements. The maximum power requirements can be achieved using module size larger than the physical limit on circuit miniaturization given in a paper by R. W. Keyes in the May 1975 issue of the Proceedings of the IEEE (pp. 740-767). In this paper, the applicable limit on circuit miniaturization is the electromigration damage to conductors and this limit allows conductors carrying the maximum current requirements of this device to be smaller than 10@-@6 cm in diameter. Using larger conductors and increasing the area of modules 7 and 8 in the plane of layers 1 and 3 of FIGS. 1a and 2 up to 10@-@6 square centimeters gives a power output capability of the layers 1 and 3 of the order of 10 KW per square meter in the plane of layers 1 and 3 in FIGS. 1a and 2.

A review of microcircuit manufacturing techniques is given in a paper by H. I. Smith in the October 1974 issue of the Proceedings of the IEEE (pp. 1361-1388), and also in a paper by A. N. Broers and R. H. Dennard in Semiconductor Silicon 1973 (pp. 830-841). Other techniques in addition to electron beam microfabrication are feasible for the microfabrication of the circuits of this invention. Among these techniques, X-ray lithography using sensitive polymers as electron resist material may be utilized for simplicity and low cost. The manufacture of micro circuit components for the instant invention can be accomplished using the micro circuit technology described by H. Sobel in the August 1971 issue of the Proceedings of the IEEE (pp. 1200-1211) and by M. Coulton in the October 1971 issue of the Proceedings of the IEEE. Diodes 9, 12, and 24 may typically be classical Schottky barrier diodes or quantum or tunnel diodes. The Schottky diodes may be of the type described by Fetterman et al in Applied Physics Letters, Jan. 15, 1974, page 70. The tunnel diodes may be of the type described by Twu et al in Applied Physics Letters, Nov. 15, 1974 or by Javan in the IEEE Spectrum, October, 1971, page 91. For the rectifying diodes 12 and 24, increasing the nonlinearity increases the efficiency of the device. As shown in the paper by J. C. Yater in the October 1974 issue of the Physical Review A (pp. 1361-1369), the non-linearity obtainable from classical diodes enables the Carnot cycle efficiencies to be obtained. For quantum effect or tunnel diodes the degree of non-linearity of tunnel diodes can be different from that of classical diodes. It can be shown using a similar method of analysis to that given in the above listed paper in the Physical Review by J. C. Yater that the efficiency of rectification is increased using tunnel diodes as the heated diodes 9 when the non-linearity is less than that for classical diodes and as the cooled diodes 12 and 24 when the non-linearity is larger than that of the classical diodes.

"Target",a collider expression:
http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20080828&CC=WO&NR=2008103987A2&KC=A2

nelsonrochaa

Quote from: lancaIV on June 02, 2015, 07:33:40 AM
I can not tell you anything about the Kapanadze invention cause I did not follow his development !

But what I think is that this kind of converter will be the common energy capture process

http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=19941018&CC=US&NR=5356484A&KC=A

but then as printable Nano-dot ink. Nano-transistors -array

40 years before:
http://worldwide.espacenet.com/publicationDetails/description?CC=US&NR=4004210A&KC=A&FT=D&ND=3&date=19770118&DB=EPODOC&locale=en_EP

I see that effect with some junction diodes, it produce emf by only capture the heat or the light.
I think John Hutchison talk about this subject. Not work in all diodes.

Thanks

lancaIV

How fast is the THz-movement ,Senhor Rocha ? Do you know Patrick Pinheiro Nan-/Rectenna work ?
                      Femto-sec diod converter is his last solution barrier !
                          For the decelerating from THz to grid fequency !

                                For what are "Di-oden" used ?
                                  Also limiting inrush current !

http://worldwide.espacenet.com/searchResults?submitted=true&locale=en_EP&DB=EPODOC&ST=advanced&TI=&AB=&PN=&AP=&PR=&PD=&PA=ken&IN=kazumi+masaki&CPC=&IC=&Submit=Search

                              But when do we want pulsed inrush current ?'
                                                   Dirac surges !               

http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=19920714&CC=US&NR=5130608A&KC=A
                                       also citing documents : NICO
          (look also for Kanarev: applied Pulse Power description ,the maths )

   For power savings of light energy consumer but also motors !


And as focus : up to 20000x sun look for Roland Winston, Universitas of California

              Parabol-concav/convex-energy receiver and converter technology

nelsonrochaa

Quote from: lancaIV on June 02, 2015, 07:50:32 AM
How fast is the THz-movement ,Senhor Rocha ? Do you know Patrick Pinheiro Nan-/Rectenna work ?
                      Femto-sec diod converter is his last solution barrier !

LancaIV
I think the thz -movement occurs on 100 GHz to 10 THz.
  you ask me things that i'm far away to my practical knowledge  :) i'm a simple researcher :) and i dont have resources to made testes in that "level".
I do not know the work of Patrick Pinheiro, but this has noted on my list to be able to investigate more about him and his work.
I've done some tests with interesting results with this technology, but still I was able to go deeper. but certainly is a good theme to be considered .

I appreciate very much that information.

Thanks

lancaIV

This is all practical knowledge,Senhor Rocha,
                         energy to matter and matter to energy understanding

http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=6&ND=3&adjacent=true&locale=en_EP&FT=D&date=19931118&CC=DE&NR=4215818A1&KC=A1

                                                             artificial :
                                                            "fiat lux"
http://worldwide.espacenet.com/publicationDetails/description?CC=DE&NR=3706385A1&KC=A1&FT=D&ND=3&date=19880908&DB=EPODOC&locale=en_EP

Boa sorte e adeus
                             OCWL