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Overunity Machines Forum



New invention of motion less generation of electric power

Started by powercat, August 26, 2009, 08:52:05 AM

Previous topic - Next topic

0 Members and 9 Guests are viewing this topic.

hartiberlin

Hi Ali,
nice device.
Maybe you can offer an Affiliate Partnership Sales Programm for this device,
then we can include some advertisement for your unit over here.

Yes, would be nice, if you could also implement a few ports on this device
to generate needed pulses for some coil switching devices
like a Bedini or Newman Wheel or TPU control frequencies.

Many thanks.

Regards, Stefan.
Stefan Hartmann, Moderator of the overunity.com forum

winsonali

QuoteI encounter some problems in switching off these FETs fast enough.
(they need ~700ns to switch off, while according their datasheet it should be possible to switch much faster, ~60ns).

yes its a very simple thing i am using IRF 740 or 840 and the capacitors are 330 UF 400 volts
but the time for switching is based on residual charges if you connect 2 parallel path Mosfet you can ensure fast switching by cross over timing

the Mirco-controller you are using is also an important factor now i am using FPGA quite complex but very power full.

i will open source the genie circuit once my new device is on the screen all those people who have this thinking that high frequency can fool the meter they are wrong.

i am trying to up load my new device probably 2 moro you will be very happy to see the new Winson Charge Accelerator. this is the name of the new device.

Mosfets are very nasty elements they blow up very quickly, don't forget to put 10 k resistance to ground on gate pin it will keep it always low level and it will not go in floating stage and once you applied voltage to gate, put 1 K so you will get 1:10 ratio divider and the current will be limitise and protect the Mosfet to an extent 
this is my experience when you directly connect mosfet and source jumps from high to low the tri state condition applies this is the period when most of the mosfet blow up coz a source to drain current is flow and the gate came in floating stage any thing can happen to blow so connecting a high resistance to ground will always deter the floating stage.


winsonali

Stefan.
please advice me how to go about your suggestion the best thing is all the forum members can enjoy a liberty to get it programmed as they need it

i will be posting my new video either 2 moro or on Monday at the latest the name of the new device is winson charge accelerator. i hope every one will enjoy it.

teslaalset

Quote from: winsonali on January 09, 2010, 04:40:55 PM
yes its a very simple thing i am using IRF 740 or 840 and the capacitors are 330 UF 400 volts
but the time for switching is based on residual charges if you connect 2 parallel path Mosfet you can ensure fast switching by cross over timing

the Mirco-controller you are using is also an important factor now i am using FPGA quite complex but very power full.

i will open source the genie circuit once my new device is on the screen all those people who have this thinking that high frequency can fool the meter they are wrong.

i am trying to up load my new device probably 2 moro you will be very happy to see the new Winson Charge Accelerator. this is the name of the new device.

Mosfets are very nasty elements they blow up very quickly, don't forget to put 10 k resistance to ground on gate pin it will keep it always low level and it will not go in floating stage and once you applied voltage to gate, put 1 K so you will get 1:10 ratio divider and the current will be limitise and protect the Mosfet to an extent 
this is my experience when you directly connect mosfet and source jumps from high to low the tri state condition applies this is the period when most of the mosfet blow up coz a source to drain current is flow and the gate came in floating stage any thing can happen to blow so connecting a high resistance to ground will always deter the floating stage.

Yes, I have already experienced a lot of blowing up FETs. I guess that's part of the research. Thanks for your advise on the gate protection.
What exactly do you mean by
Quote2 parallel path Mosfet you can ensure fast switching by cross over timing
?
Are you saying to connect two FETs parallel, so gate1 to gate2, source1 to source2 and drain1 to drain2?

gotoluc

Hi Ali,

one of two email reply's to you has come back twice as "Delivery Failure"

Did you receive any replies from me?

Thanks

Luc