New Jewel Thief "Resonate LCR Circuit" Much less energy draw....

[jadaro2600]

I'm fixing to place some more parts orders, i'll be hard pressed to find a germanium transistor though.

I think my question was convoluted.  The idea is to reduce as much as possible the current coming from the battery.  I noticed, that occasionally, a battery will provide an greater than consistent voltage when initially connected, I think this could become usefull.

Have you ever connected a voltmeter ( to a battery ) and noticed that it spikes upon connect then finds a normal value?

[jeanna]

@jadaro,

I think that initial pulse which killed a lot of people was one of the reasons Tesla gave in the fight against dc. It is really very large in a big system.

And, Yes, I have.
It happens fast and is hard to read, and the meter does not always catch it.

Gadgetmall has germanium transistors.

jeanna

[tysb3]

@jadaro

http://www.goldmine-elec-products.com/prodinfo.asp?number=G2299

[Pirate88179]

@jadaro

http://www.goldmine-elec-products.com/prodinfo.asp?number=G2299

Excellent! 

Thank you.

Bill

[jadaro2600]

Yes! I recently ordered this transistor, only two of them though I'm not so sure that our wild tangential voltages are so safe for these types of transistors; it should be noted that the 2n128 is a PNP transistor

considering mosfets?:

On top of this, I would rather be testing with MOSFETS, I was planing to test this particular circuit use two enhancement mode power mosfets rather than two transistors, just to see what the results would be like, as it stands the device uses very little current...

- - - - - - -

Eliminating the current from base to emitter all together would thus lower the overall current usage, this is just common sense.  It makes more sense to use a MOSFET when the current consumption is near enough to the base-emitter leakage associated with turning it on in the first place.

I may wind up replacing the PNP transistor with a P-Channel enhancement mode mosfte and leaving the NPN transistor, as I can see the only place where current is really leaking through to ground ( about the transistors / semiconductors ) is through the PNP base-emitter ...  the oscillation are already voltage oriented pulse activated at this locate.

I have been warned about the sensitivity of the thin film glass metal oxide gate's sensitivity to electricity ( and hence their breakdowns ) .. I'll have to be extra careful with them in this case.