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Overunity Machines Forum



Kapanadze Cousin - DALLY FREE ENERGY

Started by 27Bubba, September 18, 2012, 02:17:22 PM

Previous topic - Next topic

0 Members and 265 Guests are viewing this topic.

Hoppy

Quote from: AlienGrey on November 29, 2016, 10:33:32 AM
Hoppy  it's a BEMF device I think if your lucky the voltage can be about PIE times what you put in, but you can't use cheep slow diodes as the break down voltage and capacitance will just drain it all away, now where is your device now I have told you how it works ? :D :D

Yes, the SSSG is a BEMF device. Top marks Alien, take a sweet lad.  :D

lost_bro

Quote from: nelsonrochaa on November 29, 2016, 07:10:45 AM
Hi Wesley,
I apreciate your words but im not search a investor like some of that guys that you enumerate. I already work to a company , and i have now a really good and nice life :) only by doing what i like and being paid to make that. That bad times already go away  , when i dont have resources to work or to live .I really dont earn anthing show my vĂ­deos  i just show because my true inside feelings is share to people  ,  even condicionated in what is showed and in what people want to see .
I just try to show to some  that type of system could be made in several ways not only in the way like ruslan show or others. But something seems common between all that circuits. And that is something to think . BEMF and their use in circuit  .
That type of circuit have not just one stage but several ,  either have  a fixed frequencie , but a frequencie controlled by parametric oscilator , that work based in change of inductance of one of reactor. Many aproach could be used to reach the same goal  but in diferent manners.
Myself post some months ago some of that examples Stages diagram in my channel and in that forum .
But im not teaching anyone even earn anything ...  Only sometimes some insults and bad words in my YouTube channel  comments :)


All the best to you

Good day Nelson
Thanks for sharing the new video........ good luck!

take care, peace
lost_bro

lost_bro

Quote from: Jeg on November 29, 2016, 07:35:44 AM
Hi Verpies. You were so right from the begin. I implemented a P-channel driver utilizing two mosfets in series. Its efficiency is not even close to what of when i use N-channel HS. Too much heat across the mosfet due to its high Rds on resistance, too much heat across resistance divider, and at the end the flyback spike was the half in amplitude than when n-channel HS is used (with same supply current and duty cycle). 
So, i rebuilt it using a GDT now with two outputs. Two mosfets in series total breakdown voltage at 2KV, clamped at 1,6KV. I can't wait playing with it as i finished it last night.

Lost bro, nice build man. I wish i had your skills with this smd technology. My board is the double of your size!

Hi guys ;)

Good day Jeg

Your'e the first person *along with Verpies* that have commented on using GDTs *or "gate pulse transformers" for isolation.  Yes, it's old school, but some things never go out of style!  Even with the newest optos, RF iso drivers etc, you reach a maximum standoff voltage which Silicon will not resist, especially in small footprints......... I used a 12KV rated USA made 30awg magnet wire for the GDT braids. The 12KV is a nominal rating and with nano-pulses and adequate ventilation I  suspect that the GDTs are capable of  a greater voltage standoff, but the SiC switch is only rated for 7.2KV so  we have some headroom.

Attached some photos of my 7.2KV series SiC_Mosfet switch (SiC_Pack) and SiC_Pack_driver V1.  The  rise and fall times are respectable for a high speed magnetics based / isolated SiC Mosfet driver. Actually we are at the *spec sheet* limits for the CREE C2M0080120 SiC mosfet. Of course a digital based driver setup could easily half these speeds ( with much less standoff Voltage), but being old school I opted for the magnetics based isolation as it is pretty much bullet-proof.

All six series channels were tested to a frequency of over 1.4MHz @ pulse width of 58-78ns with a skew of +-1ns between fastest and slowest channel. The rise / fall times are 24ns / 20ns approx. with final installed on-pcb toroids.

The SiC_driver combo floats a +22; -8 volt gate signal @ the  Cree_SiC_Mosfets. The design uses Dynamic & Static voltage balancing, which avoids some of the issues involved with running HV SiC mosfets in SERIES. The balancing Capacitors are Russian Military Surplus Silver Mica, along with Cree_SiC_Schottky diodes.  Can't beat the price for quality with surplus Russian military gear!

Forgot to mention that the small signal input to the driver is synthesized by a Hacked AD9850 dds controlled by Arduino based software (last pic).

Good luck on the driver.
P.S. P.M. me, I have 'extra' pcbs that are NOT populated, if interested.

take care, peace
lost_bro

AlienGrey

Quote from: NickZ on November 29, 2016, 09:00:07 AM
    Nick
   I congratulate you on your achievements, and your outstanding work.

Which in time can lead to electric cars, and other devices that can self run.
   You are the first and up to this time the only one on this forum to do so. Even without needing to copy anyone elses device.

You asked for info on a self runner, I pointed you to the Don L Smith publication pdf, The device you have on your living room table is someone else's device Dally's, whatever you make someone else has already done it, as I said all this info is on the internet, if you copy someone else's device is up to you but don't be a hypocrite over it ! and stop misquoting me, assumption is no proof.

verpies

Quote from: Hoppy on November 29, 2016, 09:51:12 AM
We see slowly falling voltage levels in Nelson's latest video, thus the use of big cap banks to extend run times.
That's why I asked and Nelson replied that these cap banks are not used in this version.