Kapanadze Cousin - DALLY FREE ENERGY

[d3x0r]

I replaced my nanopulser with another TL494; now I get an excellent transfer through TR1... but now I'm back to ... that pulse drains all my produced 150+....  I replaced the 100k variable resistor with a 1Mohm resistor to drop the frequency... the drive pulse is 200ns...  At such a low frequency it is very hard to tune the duty cycle that short...


The voltage across the collector-emitter drops in 50ns or lesss.  Creates a spike on the secondary, then the secondary has a pulse that lasts about 2us. (1us rise, same as fall)  The voltage returns to the collector after about 200ns.  This NTE2319 switches very fast indeed... so the drive pulse is much shorter than what results from TR1

[verpies]

Yes, with a C/E of just 150V I agree.

That's why the voltage on that Neon Lamp is +150VDC so does not exceed V_CE.
That voltage is really determined by the peak-peak voltage on the T2's secondary, which after rectification, by the FWBR, becomes  the +150VDC supply rail.

[Hoppy]

I replaced my nanopulser with another TL494; now I get an excellent transfer through TR1... but now I'm back to ... that pulse drains all my produced 150+....  I replaced the 100k variable resistor with a 1Mohm resistor to drop the frequency... the drive pulse is 200ns...  At such a low frequency it is very hard to tune the duty cycle that short...


The voltage across the collector-emitter drops in 50ns or lesss.  Creates a spike on the secondary, then the secondary has a pulse that lasts about 2us. (1us rise, same as fall)  The voltage returns to the collector after about 200ns.  This NTE2319 switches very fast indeed... so the drive pulse is much shorter than what results from TR1

I'm able to hold at around 50V on pulse and I doubt that Dally did much better. The bottom line is whether the pulsed coax is able to rescue the situation and boost the L4 winding sufficiently to drive the ATX PSU, which I'm very doubtful.

Regards
Hoppy

[Сергей В.]

Looking at the KT926 spec: 150V with a gain of 2, how on earth can the nano pulser chip directly drive this transistor as shown in the Dally schematic? I'm becoming more convinced that Dally was not pulsing the co-ax with anything approaching a 1ns pulse, if at all!

Regards
Hoppy

Before affirm something you need fisrt to know what are affirm and second to check your affirmation before present it to public. What are you know about Dally's pulsing the coax with nano pulses? You don't know nothing about it. Dally gave schematics, photos, recorded 3 videos and many people who even haven't hold soldering gun not mention soldering station affirm Dally's device is a fake and videos were hoax. On that way you can affirm Tesla didn't exist at all and all his discoveries and inventions are pure fiction or somebody else did all of that.
ABSURD. No one knowledge can be ABSOLUTELY RIGHT !! Everything must be checked and verified!! This is universla rule and must be implemented in all fields of human mind activities. Why ??
Because it's the only way which can bring all of us new and safe future not end of civilization like ILLUMINATI CABAL plan to do !!

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Now about КТ926
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h21e parameter with Uce = 7 V, Ic = 15A and T = 298 K is between 10--60.

I have gave replacement for him in two variant and nobody has checked it!!

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About nano pulses.
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What is it "Nano-Pulse" ?? In fact it's a PURE RADIANT !! Tesla has discovered it before 100 years and all possible and imposible variant have been checked by him.
So don't again and again discover "THE BICYCLE", like 99,9999% of people do on this planet.Main source of radiant or nano-pulse are DSRD or DRIFT STEP RECOVERY DIODES !! All we need is to make appropriate conditions!!

Effect of high power nanosecond impulse generation by drift step-recovery diodes (or DSRDs) has been discovered by several independent Russian inventors in 1981 (Grekhov et al., 1981). In traditional SRD charge is stored in the diode by means of a nearly steady-state forward current flow. That is the forward bias exists continuously for times compared to or longer than the hole and electron lifetimes in the active region. Conversely high power DSRD uses a short forward bias pulse to introduce stored charge to the device. Since the pulse width is considerably less than the carrier lifetimes, the charge is concentrated near the junctions, which is desirable for a sharp reverse step recovery. These structures have been shown to be capable of operating at much higher power levels than conventional SRD structures. The DSRD have been found to be useful primarily above one kilovolts and offer lifetimes only somewhat better than conventional SRD. Brylevsky et al. (1988) thanks DSRD achieved peak powers more than 1.6 megawatt on 10-Ohm loading with two-nanosecond rise time.

The step-recovery effect in the DSRD can be observed only by satisfaction of specific conditions. Because charge carrier mobility in the drift diodes are low therefore current
at the straight direction through the p-n junction not constant but briefly. Moreover straight time transition for the diodes with a long lifetime of the charge carriers has to
be as short as possible. If diode has a short lifetime charge carriers (approximately 500 nanosecond) current to the straight direction is only limited by p-n junction overheating
and can be as long as 10 microsecond (Grekhov et al.,1984). There are a lot of commercial available diodes that can be used as DSRD (Zienko, 1984).

Differences of the commercial high power diodes from ideal ones lead to efficiency decreasing and pulse shape distortion. These defects can be eliminated by carrying out the following conditions: a) forward current duration and brought into the p-n junction charge have to be as small as possible, and b) reverse current duration has to be considerably less (10
times and more) than forward current duration (Belkin et al., 1992). Earlier DSRD (Zienko, 1984; Grekhov et al., 1986; Kardo-Sysoev and Chashnikov, 1986) are used as a sharpener of
the step voltage generated by power semiconductor switchers (high power thyristor, for example).

Thyristor is an optimal active element for step voltage generation if pulse duration is longer than its rise time. But thyristor is very low efficiency if pulse duration and rise time is comparable values. Losses of energy deal with thyristor switching losses and dissipation energy into the DSRD. Low efficiency and comparatively slow relaxation time peculiar to thyristors limit repetition rate of the device. Therefore later Brylevsky et al. (1988) proposed to use intermediate inductance energy accumulator. Energy transmission from the inductance accumulator to loading has been realized by DSRD. In this case has been eliminated losses described earlier and increased efficiency of the generator. Peak voltage produced by generator was significantly exceeded power supply level. Using 50 Volts power supply has been achieved impulse voltage near 1300 Volt with 2-nanosecond rise time on the 50-Ohm loading. Efficiency of this scheme was more than 20%, repetition rate up to 20 kHz.

Using of several switches complicate control circuits. Belkin et al. (1992) tried to simplify switching scheme. They used single switcher that transformed energy from power supply. Current reverse through DSRD has been provided with assistance of core saturated transformer. Using 100-150 Volt power supply they formed high voltage impulse (700-1000 Volts) with 1-1.5 nanosecond rise time on the 50-Ohm loading. Repetition rate was up to 50 kHz with efficiency up to 50 per sent. It is clear the scheme decisions described above have been
primarily made for experimental investigations of a step recovery effect in the high power diodes and can’t be directly used for GPR application. Among of their common defects are complicated switching and control circuits, using of comparatively high voltage power supply.

Using driving circuit described above in Dally's topic experimental testing of power rectifier diodes in the DSRD mode have been got the following results.
Series of old western 1N5408 impulse rectifier diodes (reverse voltage VR=1000V, forward current IF=3A, reverse recovery time trr=200 ns) was under investigation. Driving voltage parameters were peak-to-peak voltage E=(E++E-)=100...400V, positive half-wave duration Ï,,+=300 ns, negative half-wave duration Ï,,-=200 ns, rise and fall time  Ï,,=60 ns, positive to negative voltage rate E+/E- =1/2.

During the series of the experiments minimum rise time was 1.6 nanosecond and maximum peak voltage as 550 Volts on the 50-Ohm coax loading has been achieved. Driving impulse amplitude changing was not furnished with shape distortion. Power consumption was less than 6 Watts with 20 kHz pulse repetition rate. Repetition rate may be increased up to 100 kHz without generation characteristic deterioration by driver circuit modernization.

Another interesting western  candidate in my opinion which need to be chekec is 1N1198. Pdf was attached !!

[d3x0r]

So on the high voltage to coax circuit....


After the neon's/voltage storage cap, there is a coil (220uh?), connected to a cap.  I'm beginning to understand that this is probably like a dose of energy to disappate.  Under the current surge, the near cap is emptied, and as current starts to move in the coil that's absorbed initially by the magnetic field... then the short pulse drive on the transistor will be off, then unlabeled coil will saturate, and current will be able to go through to fill the cap back up....then the current won't be flowing anymore, and the coil will dump back into the +150 neon side.


Is that approximately right?
so a 220 uh coil, I have that, it's 13turns x 5layers x 6cm or something, and it measures 250.  but it doesn't have a core.  The schematic indicates a solid core, would probably be better, ya?