Kapanadze Cousin - DALLY FREE ENERGY

[Alfeen]

P.S.
There is no such word as "inductivity" in English language, but I understand what you meant

Shame on me! I should have known better! ---> inductance !!!!

[Сергей В.]

Привет Itsunadze

I have seen you have a problem wit your mosfet. I sugest you to go back on КТ926А because you will have a smaller problems and as you have said once ago, you want to relicate in 1:1 Dally OU generator. I see you have change your mind !! 

Itsu you are very strange man.    You want to driving your Mercedes Benz like Formula 1 car. From 1st speed to 4 from 2 to 6.... 
Well we will try to remade your Mercedez Benz MOSFET to drive like Formula 1 HEMT !!   

You have oscillations due to inappropriate impedance matching between driver and transistor. Main problem here, iwith a MOSFET is relatively high input capacitance. You need to make as much as possible constant voltage through a input capacitance over a vary wide frequency range. More about octave with substantially highest maximum frequency (shortest pulse) you can get of your Mercedes Benz. So you need very wide bandwidth compensation network with as little as possible S11 parameter and as high as possible S21. Or in simple words you need as little as possible reflections of pulse on the input on your transistor. As you already know  input impedance of your Mercedes Benz can be represented by a capacitance, inductance and resistance in series. The goal is to get optimum source impedance which mean impedance must be pure real or pure resistive over very broad band frequency range.

Well this is impossible task for whole band but on the single frequency this can be made with easy. I mean easy if you have vector network analiser. This is pretty complex task even for experienced RF engineer. As much as band is wider task is harder. You need to compensate imaginary part of transistor impendance and to maintain littlest voltage variance on input capacitance of transistor. You should not use small inductance in parallel on input of transistor because you will make large parasitic oscillations. So only one thing is left to you and that thing is series inductance. You need to tune your input network on the middle of wide frequency band you will use. This mean if a product of your relative bandwidth (bandwidth/center frequency) and loaded Q of newtwork is much less 1 on the middle of the bamd you will have good matching and no parasitic oscillations. All valuse are normalized on 2пf so you can easy calculate components.

ps. I have attached schematic in Splan. I fave already gave a link of Splan and SprintLayout6 so search and download it untill you can !!

Удачи Сергей В.

[Hope]

Thank you for THE GIFT.

13.56xxxxx Mhz  Here is another part perhaps the last part.  It is the key to hydrogen transmutation.  It is derived by taking the sputtering frequency of palladium element 46 divided buy the "golden ratio" (gives the alignment of all elements upon Walter Russell charts).

From this all other elements are based.   Known and theorized.

God be with us,

Hope


Edited "corrected to palladium not plutonium"

[itsu]

Привет Itsunadze

Itsu you are very strange man.   

I know, thanks for reminding me   

The KT926A did not show any DSR effect up till now, the MOSFET did, so thats why i push now on with the MOSFET.

I think it was Hoppy who said he wanted to relicate the Dally OU generator 1:1, not me.

I am trying to solve this 30Mhz oscilation problem with the help of verpies by looking into the driver/MOSFET matching situation.

We made some tuned blocking networks like mentioned by you, but this did not solve it yet.
I will take your suggestions with me, thanks for looking into this.

Regards Itsu.

[verpies]

You have oscillations due to inappropriate impedance matching between driver and transistor. Main problem here, with a MOSFET is relatively high input capacitance. You need to make as much as possible constant voltage through a input capacitance over a vary wide frequency range.

Why would you write that?
Even the idealized voltage waveform appearing on the gate of a MOSFET is very far from constant. See the attached graph and more info here.

Also, didn't you notice that Itsu's MOSFET oscillates even after the falling edge of the Gate signal ?
At that time the gate is clamped to ground very hard as the UCC Driver can provide up to 8A of sink current if not limited by R2 (R_GATE).