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Overunity Machines Forum



Kapanadze Cousin - DALLY FREE ENERGY

Started by 27Bubba, September 18, 2012, 02:17:22 PM

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0 Members and 63 Guests are viewing this topic.

justawatt


Hoppy

Quote from: conico on November 20, 2016, 11:56:14 AM
Scop shots can tel you what you already have now, , a good signal in gates without changing your push pull in gates mosfets.
If you want to work for nothing is your choice!

Are you suggesting that apecore's gate signal as shown in his attachment (ref:post 15922) is good enough for this application and if yes, why do you think so?

verpies

Quote from: conico on November 20, 2016, 11:19:14 AM
So, Mr Vierpies  don't give solutions for bed signals on gates , if you can, give us a solution for bed signals on drains, will be ok.
What if the spikes in the drain circuit are responsible for some "magic" ?  AFAIK these spikes reach the yoke and the grenade and we don't know what they do there.  NickZ will chime in here..
Are you sure you want to suppress drain spikes?  If "yes" then how much do you want to suppress?  ...all the way down to 0 Volts or less ?  How much less?

Quote from: conico on November 20, 2016, 11:19:14 AM
Lossless clamp kills every signals we need or we don't need, ...
Lossless clamps clamp any signal above the drain power supply rail.  They don't kill spikes all the way down to 0 Volts.

verpies

Quote from: magpwr on November 20, 2016, 08:08:06 AM
Some of us may recall that "mosfet is able to function well at high frequency" and IGBT is more suited for low frequency.
Yes, MOSFETs are faster but IGBTs can take more abuse in the collector circuit.  Their gates are equally vulnerable.
Also, when MOSFETs turn-on, they act as bidirectional resistors while IGBTs act as unidirectional diodes with 2V voltage drop and all that goes with it.  At high currents diodes become more efficient than resistors.

IMO yoke transformer's leakage inductance will damage MOSFETs faster than IGBTs upon circuit interruption (turn-off), but the spike from the leakage inductance can easily exceed the 1.2kV C-E breakdown voltage, too.  There is no limit to this voltage in theory.
The leakage inductance is the major cause of these voltage spikes.  You can measure this inductance by connecting an LCR meter to the primary winding while the secondary is shorted.  In an ideal transformer this reading should be ZERO.

Q: What causes the leakage inductance? 
A: Badly wound windings and bad transformer builds (e.g. leaky cores).

conico

Quote from: Hoppy on November 20, 2016, 12:12:34 PM
Are you suggesting that apecore's gate signal as shown in his attachment (ref:post 15922) is good enough for this application and if yes, why do you think so?
I am sure that picture show the signals on drains not on gates. If this signal are on gates the mosfets are already burned.