Claimed OU circuit of Rosemary Ainslie

[MileHigh]

Anyway, until the skeptics have the INTELLECTUAL HONESTY to realize that non-equilibrium thermodynamics explain this circuit phenomena and all other open circuit systems, they'll be forever stuck in the dark as they have so darkly demonstrated.

This is a very serious issue and it is worth revisiting again, it goes to the heart of the matter.

There are no "non-equilibrium thermodynamics (that) explain this circuit phenomena."  That is simply NOT TRUE.  There is no rational reason to accept this statement as being true.  If what he is stating is true, than any electrical circuit connected to a battery or power supply is a "non-equilibrium thermodynamics circuit."

There is no such thing as non-equilibrium thermodynamics, period.  (I don't want to argue quantum mechanics here.)

A reminder, this circuit is about as simple as they get, an inductor, a resistor, a diode, and a battery.  Don't be deceived into believing that thermodynamics breaks down in this case.

This circuit takes battery energy and turns it into mostly heat and a very small amount of mechanical energy (the coil-resistor singing or hissing - which also becomes heat) and a microscopic amount of EM energy that is radiated away into space.  Ultimately, the heat produced by this circuit gets radiated away into space also.  There is your equilibrium.

The burden is on Aaron and others to prove what I am saying is not true, it doesn't go the other way around.

MileHigh

[MileHigh]

Aaron:

On the technical side:

Some simple tests I already did before are running the circuit and checking the draw from battery and then putting control on resistor to get to same temp at whatever wattage. The control seems to always need more wattage to get resistor to same temp. That is clearly very telling in and of itself - the real test is drawdown compred to control.

Here is the scary part.  How are you checking the draw from the battery?  If you aren't measuring this properly, then any control vs. device under test draw-downs are all suspect.  As far as I am concerned your draw-down time for control vs. device under test methodology is no good also, as i have stated in the past.  Can you come up with a better system by measuring the before and after energy in the battery and comparing that with how much energy you calculated was burned off in the device under test?

MileHigh

[Yucca]

EXACTLY. Do you know maybe the way to damage internal MOSFET diode but let FET still working ?

I have not read of a way to do this, I have tried in the past by slightly overpowering the diode but it always closes short. I have also tried with short HV impulses but the FET always gets damaged with it. Since then I have learned to use a good transistor instead.

FET protection diode is usually 100+ volts avalanche breakdown device anyway so just keep it below avalanche by sinking the spikes elsewhere using another diode and it wont conduct.

Having tried to do this and thinking about it further Ive realised that there is little point in trying to remove the protection diode, if you remove it to have high back V manifest accross S and D then you will blow the FET anyway at only slightly higher than the diodes avalanche V.

Better to use a nice switching transistor with high max reverse voltage if you want to float the ringing, I recommend 13005 base tied with 1k to gnd, provided your base drive signal has moderate power (like sig genny) then the squares should have reasonable risetime. If you want to drive straight from 555 then you may need a small transistor to preamp the base drive in order to get sharper transients.

But wait using anything other than IRFPG50 (or whatever it is) will not work in this fantabulous COP17 circuit! cough cough.. BULLSHIT.. cough!

edit:
note to all:
You will get less FET heating and more load heating by softening the gate drive using a small cap to gnd or a series inductor. A simple mod to increase the COP of this circuit. The other even easier mod is to solder the drain to the source.

[TinselKoala]

"The other even easier mod is to solder the drain to the source."



Works good. Great way to recycle those blown mosfets.

And Aaron, simply turning up the power until your "control" resistor is at the same temperature (monitored how now? and how calibrated?) is not a good way to do it. The more valid comparison would be to do as I showed, where I monitor the time and temperature profile of the load under the Ainslie condition and under DC at the same or similar average input power. Clearly, if the Ainlsie system is making more power somehow, the load should heat up faster and get hotter, with the same input power. It's the rate of heating that is most important, at the same known input power.
Your method is actually backwards and is subject to large error. Obviously.

[WilbyInebriated]

I have not read of a way to do this, I have tried in the past by slightly overpowering the diode but it always closes short. I have also tried with short HV impulses but the FET always gets damaged with it. Since then I have learned to use a good transistor instead.

FET protection diode is usually 100+ volts avalanche breakdown device anyway so just keep it below avalanche by sinking the spikes elsewhere using another diode and it wont conduct.

Having tried to do this and thinking about it further Ive realised that there is little point in trying to remove the protection diode, if you remove it to have high back V manifest accross S and D then you will blow the FET anyway at only slightly higher than the diodes avalanche V.

Better to use a nice switching transistor with high max reverse voltage if you want to float the ringing, I recommend 13005 base tied with 1k to gnd, provided your base drive signal has moderate power (like sig genny) then the squares should have reasonable risetime. If you want to drive straight from 555 then you may need a small transistor to preamp the base drive in order to get sharper transients.

But wait using anything other than IRFPG50 (or whatever it is) will not work in this fantabulous COP17 circuit! cough cough.. BULLSHIT.. cough!

edit:
note to all:
You will get less FET heating and more load heating by softening the gate drive using a small cap to gnd or a series inductor. A simple mod to increase the COP of this circuit. The other even easier mod is to solder the drain to the source.

i am pretty sure no one has ever said the irfpg50 is required for fantabulous COP>17. can you direct us to this statement? or is it one of those imaginary ones like tk's "predicted by..." statement that somehow neither he nor his sycophants can find? what has been stated about the irfpg50 repeatedly is that since it was specified in the original schematic using something else was bad scientific method in regards to replication. and of course the naked emperor stated that it would perform the same as the other fets, which it doesn't.