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Overunity Machines Forum



Self running coil?

Started by gotoluc, March 13, 2010, 12:40:57 AM

Previous topic - Next topic

0 Members and 20 Guests are viewing this topic.

mscoffman

@All

Here's a data point for transistor devices that better matches
the gotoluc coil system, I think. There seems to be a fairly
linear  relationship between Rds and Ciss for all mosfets.

Tmos Device = VN0300L n-channel
Rds ohms max = 1.2
Id amps = 1.0
Vgs(th) min = 0.8
Vgs (th) max = 2.5
Vdss Volts =  60
Ciss pf Max = 100
Crss pf Max  = 25
ton ns max = 30
toff ns max =30
case style TO-92

note: Rds = 1.2ohms is worse than .15ohms of IRF640
        Ciss = 100pf is much better than 1560pf of IRF640

        The question is how important is lower Rds to operation
        of the overunity energy coil? Input gate AC power
        is much less...Just a data point.

:S:MarkSCoffman

gotoluc

Hi everyone,

wow... you all have been working at this today. Thank you for all of your participation.

@MarkSCoffman, that is some massive calculations :o blow me away. How about you just ask me to do a specific test that would take less than 10 minutes and I can make a video of it. Just let me know.

I was able to get the CNY17-3 OPTO today and I tried it. What's left of the pulse signal at the mofet gate is very ugly :-\   @20KHz and has next to no pulse width (flat top). Much worse @30KHz. There is no way a signal like this will switch the mosfet correctly. The other problem is the 10K resistor across the gate and source to turn the mosfet off after the pulse. That alone consumes about 600 micro amps. at 20KHz let alone what the gate will be using. A higher value resistor makes the signal even worse. These cheap OPTO's is not the way to go. Mostly because a resistor is needed across the gate and source to make it work:P   We need a better solution. I know you are all looking into it, so I'll wait till the verdict is out to buy more stuff.

I also picked up a CMOS 555. From what I can measure, it seems consumes 300 micro amps, so I'll play around with it and see what it can do.

Thanks for all your help and support as without all of you this would not be possible for me alone to do. If this circuit ends up being real! the credit will go to all who participate in developing it.

Luc

xenomorphlabs

Maybe these work better ? :
http://pdf1.alldatasheet.com/datasheet-pdf/view/86240/IRF/PVI1050.html

I have only used them at low frequencies though, so there is no guarantee that they would perform better than ordinary optocouplers.

The safest way to get a high frequency would be the small sized audio transformer MOSFET gate control (fed with very low current) similar to how it´s done here (It might pose a new problem due to the new inductance though but maybe neglible):


NextGen67

Quote from: mscoffman on March 19, 2010, 08:48:17 PM
@All

Here's a data point for transistor devices that better matches
the gotoluc coil system, I think. There seems to be a fairly
linear  relationship between Rds and Ciss for all mosfets.

Tmos Device = VN0300L n-channel
Rds ohms max = 1.2
Id amps = 1.0
Vgs(th) min = 0.8
Vgs (th) max = 2.5
Vdss Volts =  60
Ciss pf Max = 100
Crss pf Max  = 25
ton ns max = 30
toff ns max =30
case style TO-92

note: Rds = 1.2ohms is worse than .15ohms of IRF640
        Ciss = 100pf is much better than 1560pf of IRF640

        The question is how important is lower Rds to operation
        of the overunity energy coil? Input gate AC power
        is much less...Just a data point.

:S:MarkSCoffman

Ha, I have to re-read your previous post a few times to digest what you wrote, but thanks for the info. Your calculations might need to be interpreted a bit lossy I guess because there was not really time to get good readings regarding Cap. Depending on what you saw on the video, with or without battery makes a lot of difference.

I think the most important part is to have the lowest Ciss, thus I would prefer a Ciss of 100pF with a Rds of 1.2 Ohm above a Ciss of 1560pF with a Rds of .15 ohmm.

I guess must take some time to find the most optimal type. There must be something available like Rds<0.5 Ohm / Ciss<100pF

The thing with the opto switch is that it uses a tremendous amount of energy (compared to a non opto fet). And actually, there is nothing bad with Gate leakage, as long as we can determine how much is leaking.

Suppose we run the fet from the Cap, then there is no worries about gate leakage, since the energy would come back in the same cap again.

The VN0300L has a higher Rds and Ciss tough, according to my data sheet (still pretty low).

Ohh for ALL who would know....

I am not good with non DC resistance thing's.. Is there a way to determine the resistance of his coil at say 35Khz [or rather at his optimum frequency] ?

--
NextGen67

NextGen67

@Luc,

Luc, just send you a PM, subject named: Tests...

Could you perform these for me when you got some time?

I forgot, what was voltage of your Caps? ( 2*3900uF at ? Volt. )

It might be better to include the cap value in the cleanup drawing of your circuit, as it *does* make a difference on your tuning frequency.

--
NextGen67