COP 20.00 (2000%) Times, Reactive Power Energy Source Generator,

[Spokane1]

Is there anybody that saw the demonstration unit and knows the number of transistor/scr switches that the 2014 SERPS demonstration had?


Thanks


Dave

Dear Dave,
The device that was displayed at the 2014 Bedini Convention had more devices that what were actually used. I understand that Paul Babbcock took some switching network cards form his other prototype circuits to compose this proof of principle device for the convention. So it is difficult to determine exactly just how many switches were used in this implementation. However each "switch" is composed of three(3) discrete solid state devices. One is an SCR and another is an IGBJT (or MOSFET for low power applications). I don't know what the third one is, perhaps a fast steering diode.
I know this is not much help.
Mark McKay, PE

[web000x]

Dear Dave,
The device that was displayed at the 2014 Bedini Convention had more devices that what were actually used. I understand that Paul Babbcock took some switching network cards form his other prototype circuits to compose this proof of principle device for the convention. So it is difficult to determine exactly just how many switches were used in this implementation. However each "switch" is composed of three(3) discrete solid state devices. One is an SCR and another is an IGBJT (or MOSFET for low power applications). I don't know what the third one is, perhaps a fast steering diode.
I know this is not much help.
Mark McKay, PE

Hey Mark,


It is actually of more help that you'd realize.  It just so happens that between this post and another post in the Energetic  Forum that you made that I've pieced together some more of the puzzle in my head.  I've been studying the scant amount of SERPS imagery from Aaron's website and from watching the conference presentation.  It seems from the wires that are leaving the prototype board terminals and going to the load, caps and transformer that they are using 6 different switches.  This would line up with them being able to arrange a parallel charge/series discharge in both polarities of the 60 Hz sine wave. 


I've been reading over Eric Dollard's work on the differences of EMF and voltage, as well as MMF and displacement current and how they apply to power production.  I think I'm starting to see something come together that might be useful and engineerable.  I just need to get a switching scheme down so I can take it to the bench.


Thanks,


Dave

[web000x]

Did anybody catch any details about this circuitry that can be seen peeking over the waveform on the top left?  I can't really make out anything significant.  Were there components with heat sinks?  Another switching element, maybe?  How many wires were going into this circuitry?


Thanks,


Dave

[web000x]

Does anybody know of a readily available MOSFET that has a switching fall time of 5 ns or less?  I'm searching and am finding potential candidates, but none of them seem to be distributed in smaller quantities due to lack of demand and manufacturing protocols.

[Janya]

Hi Dave,

How voltage you MOSFET need? For find transistor you need know Voltage, RDS On.

May be this IXTY08N50D2 like for you. Breakdown Voltage is about 500 v.

Try looking for in the HEXFET(it just Power MOSFET) or in the DirectFET(Digital Audio MOSFET).

May be this IRFH5215. The Fall Time is 2.9 ns on the Gate Resistans 1.3 Ohm. Breakdown Voltage is 150 v and RDS On 45 mOhm. This is HEXFET.
Or IRF7665S2. The fall time 3.9 ns with the Gate Resistans 6.8 Ohm. This is DirectFET. If you place a gate resistor less, you will decrease a Fall Time.