Steven Marks secret

[Mannix]

Hi all,

This may be off topic ..but I do break out in song at times!

http://www.overunity.com/index.php?action=downloads;sa=view;down=345

[forest]

Yes, most all FETs have a very fast internal avalanche diode to prevent excess source-gate potentials developing and thus ruining the junction.

I thought for a long time that these internal diodes hindered OU research and actually set about trying to blow that diode without damaging the switch junction. I was unsuccesful in those efforts and ruined 4 FETs.

But what I have discovered since is one way to bypass that internal diode without slowing the switch down noticeably. Taking advantage of it being an avalanche device, simply use another avalalanche diode (source to drain) with lower passing voltage outside of the FET package, the leads much be kept short if you select a passing voltage only slightly lower than the internal diode. This diode can pump a collection cap or energize another coil allowing full harvesting of BEMF.

Yes, this is what I used. Except accidentally I used bi-directional transient voltage suppression diode 1.5KE300CA .

[wings]

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[wings]

part 1 of 2

part 2 of 2

[stprue]

@GK

Here is my current set-up but no results with this one...it's probably the fact that I don't have the 2 turns up and 2 turns deep.  My driving circuit is ~530hz and the MOSFET I'm using is a IRF510A, the diodes are 1N4007...maybe too high??? Tomorrow I will make a new coil like yours but do you have any suggestions?

Thanks...Stew