Ghazanfar Ali Generator - Utlilizing trapped energy

[ramset]

Rose
If the claim is excess power.... ,accumulate the excess and loop it back to run!!
No math no pencil sharpening no head scratching![maybe even No Batteries].
Probably a lot less arguing?
A profoundly obvious conclusion!!

Bliss.............
Thx
Chet
PS
Mr. Ali sounds like a very bright and sincere man...
And yes I believe it can be very simple [OU]

[forest]

I believe it doesn't need to self-run itself. Just a very long ringdown is enough. The essence is that :
we charge a big capacitor storing initially quite a bit of energy and we use a circuit close to superconducting to sustain oscillations in tank as long as possible. Compare that to discharge of capacitor directly into load with immedate killing the dipole. The only thing missing (beside obvious parts like DC-DC converter to charge capacitor)is "special coil" or transformer which doesn't change impedance of primary when secondary is loaded.
Do you agree ? we need something which can copy the energy circulating in primary tank circuit into secondary without  depleting primary.

[gyulasun]

 Hi poynt99,

Of course any normal diode will have a „Zener-like” breakdown voltage in the reverse direction  I agree  but  we cannot strictly compare the behavior of a normal diode beyond its reverse breakdown voltage limit  to that of a real Zener diode,  the slope or steepness of the increasing reverse  current is normally much higher for Zener diodes by design than for normal diodes in the vicinity of the "knee" area.  I think you also know this.

The reason I wrote to Stefan (and Ali) what I had written is that a 200V type n-channel  MOSFET’s body diode will do practicaly nothing to a 200V positive pulse (the simulation shows the 180 to 200V pulse amplitude), in that situation this diode cannot ’give a kick’ to the LC circuit.  This is why I ’chimed’ in…  lol

Yes, I also have seen MOSFET drawing symbols with Zener instead of normal diode pictured, I disagree with such symbols.

Regarding the „avalanche rated”  MOSFET types  (you mentioned  IRFPG50),  yes they are manufactured on purpose to widthstand a certain current value in the avalanche mode.  It is important to notice here for those not familiar with this, that the avalanche mode can mainly occur when the maximum drain-source voltage rating for a certain type (1000V for the IRFPG50) is exceeded or junction temperature of the device exceeds a certain value (overdissipation starts).  Under 1000V drain-source voltage or under normal operational conditions, it is not a ’feature’ at all.

Gyula

Edited to insert the "knee" area.

Hi gyula,

Wouldn't you agree that every diode is technically a "zener" diode?

IOW, all diodes have a reverse breakdown voltage, but the difference with zeners is that they are engineered to have a specific (usually a relatively lower) breakdown voltage. And we normally include a series resistance with them to ensure they don't burn up.

I've seen MOSFET symbols with a zener rather than standard diode pictured.

Some MOSFETs are "avalanche rated" meaning they can tolerate a certain degree of avalanching in the body diode (the IRFPG50 is an example).

Regards,
.99

[gyulasun]

  A zener is designed to switch quickly.  Not all diodes are capable of those speeds.
Still not right.  Zener's are as brittle as any diodes.  Their rated voltage tolerance explains the limit of their capabilities.  And each one varies - zener or otherwise.
Then likely the zener in the body diode is designed to accommodate high switching speeds. 

Hi Rosemary,

A  Zener diode is not designed to switch quickly if you mean that switching speed (what is generally specified for switching type diodes)  is involved.  Normally, Zener diodes switching speed is not defined because their purpose is to have a very steep voltage-current characteristic in the reverse direction so that the current should change abruptly once the Zener voltage limit is exceeded.

...
No.  No MOSFET - least of all an IRFPG50 is DESIGNED TO ACCOMMODATE A DEGREE OF AVALANCHING.  Golly.  Whatever next?  Avalanching is the undesirable product of paralleled transistors.  And that applies to them all. 
...

Re on avalanche type MOSFETs:  please read this paper here in Pages 4, 5 and 6,  it is nicely explained:   http://www.irf.com/technical-info/appnotes/an-1005.pdf

Putting it briefly:  Avalanche effect can occur when the maximum drain-source voltage (specified for a MOSFET type)  is exceeded.   And there are certain power MOSFET types where the manufacturer designed the MOSFET to keep the avalanche current under a certain control so that the device should survive an avalanche current value,  once it is started,  where some other MOSFET types would surely self-destruct.
Here is the data sheet for the IRFPG50 power MOSFET, please see the second line in the feature column on the top of the first page, it says: Repetitive Avalanche Rated.
http://www.irf.com/product-info/datasheets/data/irfpg50.pdf   
This means that  maximum  6 Amper drain-source current is allowed  at a certain pulse width and at a certain junction temperature when the drain source voltage is higher than 1000V, (or  it can be less than 1000V but the avalanche current has already started due to a little overdissipation) see also Figure 11 in the data sheet.
I hope this helps, this is my intention. 

Gyula

PS  Ali,  sorry for such seemingly off topic mails in your thread, hopefully you undertand the goal -from my part at least- is to help the level of this discussion be as scientific as possible.  Looking forward to seeing further news from your great setup.

[broli]

@ All.

There are energy fields yet to be discovered. A few have been discovered but laws of physics have been failed describing them. Examples are Zem field, Bifield Brown effect as further explored by J L Naudin by working on lifter projects.
U draw a long straight line in space, it will never be a straight line. U see straight towards sun rising from the east, but u dont know that your line of sight is not a straight path to the sun. Gravity has distorted everything in space including time, spatial distance and now even the light. C is no more a constant. E=mC^2 varies in different regions of space if m is kept constant.

You just have to give a resonant push to the atoms of an element i.e the freq at which the atoms vibrate in an element and you will get the energy.
If you are able to find the self resonance point of the ferrite toroid, put it in a tank circuit, pick the value of the C and L in such a way that f0 for LC tank is same as the self resonance of the ferrite toroid, U will get maximum energy. The matter of toroid decomposes on extracting excessive energy. This is NMR. And I think this device works on the same principle.

But there are more powerful energy fields still hidden.

O assembly of jinn and men! If you are able to pass through the regions of the heavens and the earth, then pass through; you cannot pass through but with Sultan (The ultimate power / authority).
                                                                                                                                                                                            The Holy Quran,    Chapter 55 "Al-Rahman"

I apologize for my critical thinking but reading that a flag went up for me. If it has anything to do with "nmr" or self resonance frequency of the ferrite core then the sim is useless and just shows a low simulation accuracy problem. Furthermore it would mean that the ferrite type is absolutely crucial in building a replication like the one you claim is working for you.
You have to understand it's hard to believe without any tangible demonstration on your part but luckily it should be pretty straightforward to build.
I will stick to the plan and build a setup as close to your specs as possible and we'll see what it gives.