Barbat low inertial mass generator

[hansvonlieven]

G'day Rosphere,

You are after the wrong stuff, The black stuff is cupric oxide which you do not want, cuprous oxide is what you are after and this is red. This is what it should look like:



Here are complete instructions on how to create a solar cell with copper and cuprous oxide. Hope it helps.
Good luck.

http://www.exo.net/~jillj/activities/solarcell.pdf

Hans von Lieven

[Rosphere]

You are after the wrong stuff, The black stuff is cupric oxide which you do not want, cuprous oxide is what you are after and this is red.

Here are complete instructions on how to create a solar cell with copper and cuprous oxide. Hope it helps.
Good luck.

http://www.exo.net/~jillj/activities/solarcell.pdf

Thank you, Hans.

I made a red coating at one time during my electrolysis wire sample tests.  I may give this a try.

However, the Barbat document, PatD25.pdf, specifically calls for, "dull black cupric oxide." 

As can be seen, making this free-standing bare-copper coil and getting the right coating is the hardest part of this configuration.  Perhaps the black on my current coil is not CuO, or if it is then it may be too thick.  Or maybe I should use red cuprous oxide, as you suggest?

[hansvonlieven]

G'day again,

Barbat's patent relies on a photovoltaic effect. That occurs only with cuprous oxide, never with cupric oxide.

I am as puzzled as you as to why he would say this in his patent application. Besides just the cuprous oxide covered coil on its own would not create electrical potential. In other words the device as described in the patent does not work. There must be more to it than he is disclosing.

Hans von Lieven

[Rosphere]

...the device as described in the patent does not work. There must be more to it than he is disclosing.

[tak22]

Barbat makes dozens of references to the energy-magnifying coil comprising either a photoconductor, a doped semiconductor, or a superconductor.

CuO (Copper (II) oxide) has application as a p-type semiconductor, because it has a narrow band gap of 1.2 eV. A P-type semiconductor (P for Positive) is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case positive) charge carriers.

I don't think we've discounted the patent yet ....

tak